1994. 12. 23 1/2 semiconductor technical data KTD525 triple diffused npn transistor revision no : 0 general purpose application. features low collector-emitter saturation voltage. : v ce(sat) =2.0v(max.) complementary to ktb595. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current i c 5 a emitter current i e -5 a base current i b 0.5 a collector power dissipation (tc=25 1 ) p c 40 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 100 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 ma collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 100 - - v emitter-base breakdown voltage v (br)ebo i e =10ma, i c =0 5.0 - - v dc current gain h fe (1) (note) v ce =5v, i c =1a 40 - 240 h fe (2) v ce =5v, i c =4a 20 - - collector-emitter saturation voltage v ce(sat) i c =4a, i b =0.4a - - 2.0 v base-emitter voltage v be v ce =5v, i c =1a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 12 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 100 - pf note : h fe (1) classification r:40 80 , o:70 140 , y:120 240
1994. 12. 23 2/2 KTD525 revision no : 0 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta collector current i (a) c 0.1 3 collector-emitter voltage v (v) ce safe operating area h - i c collector current i (a) 0.01 0.03 0.1 0.3 fe dc current gain h 10 collector-emitter saturation ce(sat) 0.01 collector current i (a) c v - i 1234567 1 2 3 4 5 common emitter tc=25 c 25 0 300 200 150 100 50 i =20ma b 0 fe c 135 30 50 100 200 common emitter v =5v ce tc=75 c tc=25 c tc=-25 c ce(sat) c voltage v (v) 0.03 0.1 0.3 1 3 10 0.05 0.1 0.3 0.5 1 2 common emitter i /i =10 c b tc=75 c tc=25 c tc=-25 c 5 10 30 50 100 300 500 0.3 0.5 1 3 5 10 20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c * i max. c (continuous) 1ms * 10 m s * * 100ms 1s * dc operation tc=2 5 c v max. ceo p (w) 25 50 75 100 125 150 175 200 10 20 30 40 50 tc=ta infinite heat sink
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